Process for producing refractory materials

Details Process for producing refractory materials Process for producing refractory materials

1996-03-08

1998-02-17

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Outside of mold sintering or vitrifying of shaped inorganic...

Utilizing chemically reactive atmosphere other than air, per...

264666, 264676, C04B 35599

Patent

active

057188661

ABSTRACT:
A process for the production of refractory materials containing SiALON and carbon or SiALON/SiC and carbon. The process for producing a refractory material containing SiALON and carbon includes heating a molding containing silicon, aluminum, aluminum oxide and carbon to a temperature of 1380.degree. C. at a total atmospheric pressure of less than or equal to 0.1 MPa in an atmosphere containing predominantly nitrogen and containing a concentration of 0 to 5 vol. % of carbon monoxide, subsequently increasing the concentration of carbon monoxide to between 10 and 30 vol. % and heating the molding to a temperature of 1500.degree. C. at a total atmospheric pressure of less than or equal to 0.1 MPa; and subsequently controlling the concentration of carbon monoxide to be between 0 and 10 vol. % and heating the molding to a temperature of 2200.degree. C. at a total atmospheric pressure of greater than or equal to 0.1 MPa. The process for producing a refractory material containing SiALON/SiC and carbon includes heating a molding containing silicon, aluminum, aluminum oxide, and carbon to a temperature of 1500.degree. C. at a total atmospheric pressure of less than or equal to 0.1 MPa in an atmosphere containing predominantly nitrogen and containing a concentration of 10 to 30 vol. % of carbon monoxide; and subsequently controlling the concentration of carbon monoxide to be between 20 and 50 vol. % and heating the molding to a temperature of 2200.degree. C. at a total atmospheric pressure of greater than or equal to 0.1 MPa.

REFERENCES:
patent: 3960581 (1976-06-01), Cutler
patent: 3991166 (1976-11-01), Jack
patent: 4243621 (1981-01-01), Mori et al.
patent: 4578363 (1986-03-01), Campos-Loriz
patent: 5212123 (1993-05-01), Schoennahl
Abstract of DE 4109375.
"In-situ Formation of Sialons in Refractories Containing Silicon Carbide", British Ceramic Transactions and Journal, vol. 88, No. 5, 1989, Morrison, et al., pp. 157-161.

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