Process for producing reaction-bonded silicon carbide refractory

Details Process for producing reaction-bonded silicon carbide refractory Process for producing reaction-bonded silicon carbide refractory

1995-05-25

1996-04-02

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 97, 264 65, C04B 35567

Patent

active

055040462

ABSTRACT:
This invention provides a reaction-bonded silicon carbide article having superior abrasion resistance, oxidation resistance and uniformity in which the bond phase comprises appreciable amounts of both silicon oxynitride and alumina. Also provided are a raw batch and a process for producing the reaction-bonded article.

REFERENCES:
patent: 2618565 (1948-02-01), Nicholson
patent: 2636828 (1948-02-01), Nicholson
patent: 2752258 (1955-03-01), Swentzel
patent: 3206318 (1965-09-01), Yamauchi et al.
patent: 3321321 (1967-05-01), Abrecht et al.
patent: 3991166 (1976-11-01), Jack et al.
patent: 4113503 (1978-09-01), Lumby et al.
patent: 4230497 (1980-10-01), Schwetz et al.
patent: 4243621 (1981-01-01), Mori et al.
patent: 4476234 (1984-10-01), Jones et al.
patent: 4506021 (1985-03-01), Jack et al.
patent: 4578363 (1986-03-01), Campos-Loriz
patent: 4800181 (1989-01-01), Lassiter et al.
patent: 4826791 (1989-05-01), Mehrotra et al.
patent: 4935389 (1990-06-01), Umebayashi et al.
patent: 4990469 (1991-02-01), Dussaulx et al.
patent: 5132257 (1992-07-01), Kodama et al.
patent: 5212123 (1993-05-01), Schoennahl
patent: 5302329 (1994-04-01), Shiogai et al.
patent: 5316988 (1994-05-01), O'Brien et al.
patent: 5336280 (1994-08-01), Dubots et al.

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