Process for producing radioisotope source

Details Process for producing radioisotope source Process for producing radioisotope source

1997-07-16

1998-12-22

Mai, Ngoclan

Metal treatment

Process of modifying or maintaining internal physical...

With ion implantation

250303, C23C 836

Patent

active

058513159

ABSTRACT:
A process for implanting radioisotope ions into a substrate to create a radioisotope source, utilizing the chemical binding of selected ions to the surface of the substrate. Extraneous material not chemically bound to the substrate is removed and the chemically bound ions are diffused below the surface of the substrate in a non-oxidizing environment.

REFERENCES:
patent: 2711484 (1955-06-01), Knapp et al.
patent: 3378498 (1968-04-01), Weatherley
patent: 3620794 (1971-11-01), Fiqueroa
patent: 3700602 (1972-10-01), Acree et al.
patent: 3859179 (1975-01-01), Staples
patent: 4341731 (1982-07-01), Mills, Jr.
Agawala, R.P et al, Diffusion of Vanadium in Niobium, Zirconium and Vanadium, Acta Mettallungica, vol. 16, pp. 61-67, Jan. 1968.
Raether, F. et al, Magnetic Hyperfine Interaction After .sup.77 Br Implantation into Iron, Hyperfine Interactions 39(1988) 81-91.

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