Process for producing polycrystalline silicon

Coating processes – Particles – flakes – or granules coated or encapsulated – Solid encapsulation process utilizing an emulsion or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

423342, 423349, 423DIG16, 427 86, 427215, C01B 3302, C01B 33107

Patent

active

043189423

ABSTRACT:
An economical, low temperature, closed loop, thermal decomposition process is provided for producing a controllable mixture of heterogeneously and homogeneously nucleated ultrahigh purity polycrystalline silicon suitable for use in the manufacture of semiconductor devices and photovoltaic solar cells. The process manipulates the equilibrium expressed by the chemical reaction ##STR1##

REFERENCES:
patent: 2595620 (1952-05-01), Wagner et al.
patent: 2925357 (1960-02-01), Kothen
patent: 3012861 (1961-12-01), Ling
patent: 3050365 (1962-08-01), Nelson et al.
patent: 4092446 (1978-05-01), Padovani et al.
patent: 4117094 (1978-09-01), Blocher et al.
patent: 4207360 (1980-06-01), Padovani

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing polycrystalline silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing polycrystalline silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing polycrystalline silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1840808

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.