Process for producing photosensor with color filter

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S070000

Reexamination Certificate

active

06376274

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device fabrication, and more particularly to a method for forming a photosensitive device with color filter.
2. Description of the Prior Art
FIGS. 1
are schematic representations of structures at last stages during the formulation of photo-sensitive device using the conventional, prior technology. Referring to
FIG. 1A
, a planarized inter-metal dielectric layer
100
with a photo-receiving region
130
is formed. A metal layer
114
is deposited and defined to expose the photo-receiving region
130
on the inter-metal dielectric layer
100
. Then, a passivation layer
150
is formed on to protect the sensitive device below.
Referring to
FIG. 1B
, because a planar layer is needed for following color filter process, a coated planar film
152
or coated spin-on glass with etching-back process is performed. Both planar film
152
and passivation layer
150
are transparent. Then, a color filter process, comprising coating R G B filters, development, etching and top coating, is performed to form color filter
112
. Next, another passivation layer
120
is coated on to cover the color filter
112
and planar film
152
.
FIG. 2
is a flow diagram showing the steps of forming color filter according to the above conventional process with six main steps.
The above description, however, has a high cost and long cycle time because of many steps in the process. Furthermore, multi-transparent layers will give a low transimittance rate and yield.
SUMMARY OF THE INVENTION
In accordance with the present invention, a method is provided for forming photo-sensitive device that substantially reduces the cost comparing to the prior method. This is performed by reducing process steps and raw material due to the process steps are reversible.
It is another object that the present invention reduces the cycle time by reducing the planar film and passivation layer for color filter.
It is still another object that this invention increases the transimittance rate by reducing the planar film and yield.
In one embodiment, a planarized insulator with a photo-receiving region formed in is provided. Then, at least one color filter pattern is formed on the photo-receiving region by using conventional method. Next, a conformal conductive layer is formed on said insulator. A passivation layer over said partially fabricated device is formed.


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patent: 5914749 (1999-06-01), Bawolek et al.
patent: 5970317 (1999-10-01), Mizoguti et al.

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