Process for producing p-type doped layers, in particular, in II-

Details Process for producing p-type doped layers, in particular, in II- Process for producing p-type doped layers, in particular, in II-

1996-10-08

1998-06-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 438265, C30B 2514

Patent

active

057727597

ABSTRACT:
Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of nitrogenated gases.

REFERENCES:
patent: 5248631 (1993-09-01), Park et al.
patent: 5274269 (1993-12-01), DePuydt et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5371409 (1994-12-01), McCaldin et al.
T. Hamada et al., "Plasma-Assisted Epitaxial Growth of p-Type ZnSe in Nitrogen-Based Plasma," Extended Abstracts of the 1992 International Conference on Solid-State Devices and Materials, Tsukuba, 1992, pp. 360-362.
T. Hamada, et al., "Plasma-assisted epitaxial growth of p-type ZnSe in nitrogen-based plasma." Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 26-28 Aug. (abs. only).
S. Yamauchi, "The growth of ZnSe layers by plasma assisted epitaxy." Record of Electrical and Communication Engineering Conversazione, Tohoku Univ., Japan 1988. (abs. only).
J. Qiu, et al., "Recent developments in the MBE growth of wide bandgap II-VI semiconductors for laser diodes and LEDs." J. of Crystal Growth vol. 127, No. 1-4 (Apr. 1993) pp. 279-286.
S. Patnaik et al., "MOVPE of ZnSe using organometallic allyl selenium precursors." J. of Crystal Growth 107 (1991) pp. 390-395.
M. Konagai, "Wide bandgap II-VI compounds grown by MOMBE." J. of Crystal Growth 120 (1992) pp. 261-268.

Affiliated with

Also associated with

Rating

Process for producing p-type doped layers, in particular, in II- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing p-type doped layers, in particular, in II-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing p-type doped layers, in particular, in II- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1854714