Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-09-17
1999-03-02
Dang, Thi
Coating apparatus
Gas or vapor deposition
With treating means
118723R, C23C 1600
Patent
active
058765042
ABSTRACT:
The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.
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Fuji Eiji
Takayama Ryoichi
Tomozawa Atsushi
Torii Hideo
Dang Thi
Matsushita Electric Industrial Co. Ltd
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