Process for producing nitride semiconductor light-emitting...

Details Process for producing nitride semiconductor light-emitting... Process for producing nitride semiconductor light-emitting...

2006-06-20

2006-06-20

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S046000, C438S047000

Reexamination Certificate

active

07063997

ABSTRACT:
A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 5909040 (1999-06-01), Ohba et al.
patent: 6111275 (2000-08-01), Hata
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6232137 (2001-05-01), Sugawara et al.
patent: 6413312 (2002-07-01), Kawai et al.
patent: 9-283793 (1997-10-01), None
patent: 2001-0088930 (2001-09-01), None

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