Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-01-20
1984-07-10
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576W, 29576C, 29589, 29599, 357 5, 427 62, 427 63, H01L
Patent
active
044584091
ABSTRACT:
A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of V.sub.m. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.
REFERENCES:
R. B. Laibowitz et al., "Multilayer Josephson Memory Device," IBM Technical Disclosure Bulletin, vol. 15, No. 11, Apr. 1973, pp. 3316-3317.
R. F. Broom et al., "Quality Improvement of Josephson Junctions by Surface Treatment of the Barrier Layer," IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978-p. 1652.
R. F. Broom et al., "All-Niobium Josephson Tunnel Junction with Improved Characteristic," IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, pp. 1661-1662.
R. F. Broom, "Making Josephson Tunnel Junctions," IBM Technical Disclosure Bulletin, vol. 17, No. 8, Jan. 1975, p. 2446.
K. R. Grebe et al., "Josephson Device Using Niobium and Niobium Oxide," IBM Technical Disclosure Bulletin, vol. 13, No. 11, Apr. 1971, p. 3296.
H. Kroger et al., "Selective Niobium Anodization Process for Fabricating Josephson Tunnel Junctions," No. 320 Applied Physics Letters, vol. 39 (1981) Aug., No. 3, pp. 280-282.
G. Hawkins et al., "Nb--Nb Thin-Film Josephson Junctions*," Journal of Applied Physics, vol. 47, No. 4, Apr. 1976, pp. 1616-1619.
Gasser Marcel
Latta Eberhard
Hearn Brian E.
International Business Machines - Corporation
Kling Carl C.
Schiavelli Alan E.
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