Process for producing laminated semiconductor substrate

Fishing – trapping – and vermin destroying

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437 89, 437 99, 437228, 148DIG150, H01L 2186

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active

051852861

ABSTRACT:
A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a first insulating film on a single crystal semiconductor substrate, the first insulating film having a plurality of openings, and a second insulating film having a predetermined width on a perpendicular bisector of a line connecting adjacent openings of the plurality of openings; growing a single crystal semiconductor layer on the first and second insulating layers by a lateral epitaxial growth through the use of the single crystal semiconductor substrate at portions exposed at the openings as a seed crystal; subjecting the single crystal semiconductor substrate to etching back or polishing parallel to the surface of the single crystal semiconductor substrate to expose the second insulating layer; and optionally selectively insulating the single crystal semiconductor layer in the opening to isolate the single crystal semiconductor layer from the single crystal semiconductor substrate. The process obtains a single crystal semiconductor layer not having a polycrystal region.

REFERENCES:
patent: 4498226 (1985-02-01), Inoue et al.
patent: 5059550 (1991-10-01), Tateoka et al.

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