Process for producing integrated solar cell

Fishing – trapping – and vermin destroying

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437 24, 437937, 136258, H01L 31036

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053366239

ABSTRACT:
A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p Junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.

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Applied Physics Letters, vol. 56, No. 6, Feb. 5, 1990, New York, pp. 533-535, A. Asano, `Effects of Hydrogen Atoms on the Network Structure of Hydrogenated Amorphous and Microcrystalline Silicon Thin Films`.
Nineteenth IEEE Photovoltaic Specialists Conference, New Orleans, La., May 4th-8th, 1987, pp. 1095-1100, IEEE, New York, T. Yoshida et al.: "High Efficiency a-Si:H Two-Stacked Tandem Solar Cell".

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