Process for producing integrated circuit devices by ion implanta

Details Process for producing integrated circuit devices by ion implanta Process for producing integrated circuit devices by ion implanta

1977-12-30

1978-10-03

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 34, 357 50, 357 91, H01L 21265, H01L 21223

Patent

active

041182502

ABSTRACT:
In this process of producing a bipolar transistor, all the regions of the device except the emitter region are formed by ion implantation through an inorganic dielectric layer of uniform thickness. Subsequently, all the contact openings to the emitter, base and collector are formed and the emitter is implanted through the emitter contact opening. This unique combination of process steps permits the use of a surface insulating dielectric layer of uniform thickness, wherein all capacitances are uniform and controllable while still permitting direct implantation of the emitter, which, because of its shallow depth is difficult to implant through an oxide.

REFERENCES:
patent: 3972754 (1976-08-01), Riseman
patent: 3998674 (1976-12-01), Cameron et al.
patent: 4002511 (1977-01-01), Magdo et al.
patent: 4009057 (1977-02-01), Bebisson et al.
patent: 4018627 (1977-04-01), Polata
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4029527 (1977-06-01), Glasl et al.
patent: 4063967 (1977-12-01), Graul et al.

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