Process for producing high temperature pressure transducers and

Details Process for producing high temperature pressure transducers and Process for producing high temperature pressure transducers and

1981-02-12

1983-08-30

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576R, 29580, 29589, 29610SG, 148188, 338 4, 357 26, H01L 21225, H01L 2984

Patent

active

044008694

ABSTRACT:
The invention relates to a process for producing silicon diaphragm pressure transducers, and to pressure transducers so produced, which will operate in high temperature applications above 150.degree. C. by properly insulating the strain gauges from the diaphragm. This is achieved by utilizing two properly oriented silicon wafers which are joined together by a two-step diffusion technique, which includes the diffusion bonding of one boron doped wafer surface into the other wafer surface previously oxide coated, at greatly reduced pressures and temperatures than heretofore used. This simultaneous diffusion takes place because of prior contouring or the forming of relief channels into one of the bonded surfaces, and because only one joined surface is oxide coated, thus reducing process times substantially. That is, there is a continuous diffusion of boron into the boron oxide coated surface resulting in a boron rich layer of great uniformity. The process includes a mechanical lapping and selective etching which leaves the extraordinarily level boron rich surface which is very uniform and ready for processing and connection into other transducer parts. The invention is particularly advantageous in the ease of fabrication which reduces the cost of the final transducer.

REFERENCES:
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patent: 4065970 (1978-01-01), Wilner
patent: 4204185 (1980-05-01), Kurtz et al.
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Surgan, D. H., "Sealed With a Kilovolt", in the Electronic Engineer, Sep. 1968, pp. 16-17.
Mallon, J. et al., "Advances in High-Temperature Ultra-Miniature Solid State Pressure Transducers", Presented at ISA Silver Jubilee Conf., Phil., Oct. 1970.
Kurtz, A. D., "Devel. and Appl. of High Temperature Ultra-Miniature Pressure Transducers", Kulite Semiconductor Products, Inc., New Jersey.
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Gamble, H. S. et al., "Preferential Etching of Boron Doped Polysilicon Electrodes For CCD's", in J. of the Electrochem. Soc., Apr. 1980, pp. 190-192.
Vick, G. L., "High-Temperature Solid-State Pressure Transducer", Technical Report AFFDL-TR-70-163, Dec. 1970.
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