Process for producing high quality PZT films for...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S239000, C438S240000, C438S957000

Reexamination Certificate

active

06887716

ABSTRACT:
A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.

REFERENCES:
patent: 5851841 (1998-12-01), Ushikubo et al.
patent: 6090443 (2000-07-01), Eastep
patent: 6121648 (2000-09-01), Evans, Jr.
patent: 6150184 (2000-11-01), Evans et al.
patent: 6172386 (2001-01-01), Jung et al.
patent: 6190957 (2001-02-01), Mochizuki et al.
patent: 6284712 (2001-09-01), Otto et al.
patent: 6307731 (2001-10-01), Katori
patent: 6316797 (2001-11-01), Van Buskirk et al.
patent: 6322849 (2001-11-01), Joshi et al.
patent: 6362503 (2002-03-01), Hayashi
patent: 6528863 (2003-03-01), Klee et al.
patent: 6653156 (2003-11-01), Hayashi et al.
patent: 6682772 (2004-01-01), Fox et al.
patent: 6730523 (2004-05-01), Hintermaier et al.
patent: 6787412 (2004-09-01), Hashimoto et al.
patent: 0821415 (1998-01-01), None
patent: 0821415 (1998-01-01), None
patent: 04-014472 (1993-08-01), None
patent: 05-137579 (1994-12-01), None
patent: 07-143243 (1996-12-01), None
patent: 08-181358 (1998-01-01), None
patent: 08-351916 (1998-06-01), None
patent: WO 0001000 (2000-01-01), None
patent: WO 0033361 (2000-06-01), None
Fujimori, Y., Takeda, T., Nakamura, T., and Takasu, H., Low Voltage Operation of the Ferroelectric Pb(Zr, Tl) O3Capacitors Derived by Sol-Gel Method, 1999, pp. 400-401.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing high quality PZT films for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing high quality PZT films for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing high quality PZT films for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3396891

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.