Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-05-03
2005-05-03
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S239000, C438S240000, C438S957000
Reexamination Certificate
active
06887716
ABSTRACT:
A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.
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Chu Fan
Eastep Brian
Fox Glen
Horii Yoshimasa
Nakamura Ko
Coleman W. David
Fujitsu Limited
Hogan & Hartson L.L.P.
Kubida, Esq. William J.
Meza, Esq. Peter J.
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