Process for producing high purity silicon nitride by the direct

Details Process for producing high purity silicon nitride by the direct Process for producing high purity silicon nitride by the direct

1989-07-14

1990-06-19

Hearn, Brian E.

Chemistry of inorganic compounds

Silicon or compound thereof

423344, C01B 3300

Patent

active

049352148

ABSTRACT:
A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

REFERENCES:
patent: 3591337 (1971-07-01), Lumbey
patent: 4686095 (1987-08-01), Beckwith et al.
patent: 4724131 (1988-02-01), Hashimoto et al.
patent: 4732746 (1988-03-01), Crosbie et al.

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