Process for producing high purity silicon nitride

Details Process for producing high purity silicon nitride Process for producing high purity silicon nitride

1985-07-05

1987-06-30

Carter, H. T.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423406, C01B 21068

Patent

active

046769650

ABSTRACT:
A process is disclosed for producing high purity silicon nitride. The process involves contacting an organic compound which can be decomposed into silicon dioxide with essentially anhydrous ammonia at ambient temperature to form a two phase system consisting essentially of ammonia gas and the vapor of the organic compound and heating the two phase system at a sufficient temperature for a sufficient time to form the high purity silicon nitride.

REFERENCES:
patent: 4405589 (1985-09-01), Iwai et al.
patent: 4582696 (1986-04-01), Crosbie

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