Process for producing high purity silicon carbide powder for pre

Details Process for producing high purity silicon carbide powder for pre Process for producing high purity silicon carbide powder for pre

1995-09-27

1999-01-26

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117951, 501 87, 501 88, 423345, C30B 2936

Patent

active

058633251

ABSTRACT:
A process for producing high purity silicon carbide uses a high purity tetraethoxysilane or the like as the silicon source and a novolak-type phenol resin or the like as the carbon source. The process comprises a step of forming silicon carbide in which silicon carbide powder is prepared by calcining a mixture of these sources in a non-oxidizing atmosphere, and a step of post-treating silicon carbide in which the silicon carbide powder thus obtained is treated by heating at a temperature of 2000.degree. to 2100.degree. C. for 5 to 20 minutes at least once while the silicon carbide powder is kept at a temperature of 1700.degree. or higher to lower than 2000.degree. C., to obtain silicon carbide powder having an average particle diameter of 10 to 500 .mu.m and a content of impurity elements of 0.5 ppm or less. The high purity silicon carbide powder is advantageously used as a material for producing an excellent silicon carbide single crystal having a decreased number of crystal defects.

REFERENCES:
patent: 4996174 (1991-02-01), Birchall et al.
patent: 5433167 (1995-07-01), Furukawa et al.
WPI Abstract 94-252502/31 of JP060183718 A Bridgestone Jul. 5, 1994.
WPI Abstract 86-240922/37 of JP610168514 A Bridgestone Jul. 30, 1986.

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