Process for producing high-purity indium

Details Process for producing high-purity indium Process for producing high-purity indium

1980-05-19

1981-09-01

Andrews, R. L.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

75 65R, C25C 122

Patent

active

042870305

ABSTRACT:
A process for producing high-purity indium which comprises vacuum melting of the metal in two stages: in the first stage at a temperature of from 850.degree. to 940.degree. C. for 1-5 hours; in the second stage at a temperature of from 950.degree. to 1,100.degree. C. for 0.5-2 hours. Thereafter, the metal is subjected to an electrochemical refinement in a hydrochloric acid solution, while the residue of indium evolved on the cathode is remelted by introducing into molten indium at a temperature of from 160.degree. to 400.degree. C.

REFERENCES:
patent: 3049478 (1962-08-01), Morawietz
patent: 3180812 (1965-04-01), Beau
patent: 3268425 (1966-08-01), Pursley
patent: 3268426 (1966-08-01), Lavitt
patent: 3897317 (1975-07-01), Bawa

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