Process for producing high-purity hafnium amide

Details Process for producing high-purity hafnium amide Process for producing high-purity hafnium amide

2008-01-15

2008-01-15

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

Reexamination Certificate

active

07319158

ABSTRACT:
A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OyXOnRf)m(e.g., CF3SO3H, Hf(CF3SO3)4, (CF3SO2)2O, CF3CO2H, CH3SO3H, C6H5SO3H, and (CH3SO2)2O), to a crude hafnium amide which is represented by the formula of Hf[N(R1)(R2)]4, where each of R1and R2independently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.

REFERENCES:
patent: 2006/0193979 (2006-08-01), Meiere et al.
patent: 2005-263771 (2005-09-01), None
patent: 2005-298467 (2005-10-01), None
Dennis M. Hausmann et al., “Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors”, Chem. Mater. 2002, vol. 14, No. 10, pp. 4350-4358.
T. Otsuka, “Journal of the Mining Institute of Japan”, 1969, pp. 993-999 (1969).

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