Process for producing high-purity gallium

Specialized metallurgical processes – compositions for use therei – Processes – Electrothermic processes

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75 84, 75111, C22B 700, C22B 3004, C22B 5800

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active

043625606

ABSTRACT:
A process for producing high-purity gallium from gallium-arsenic containing wastes resulting from the manufacture of semiconductors which comprises a vacuum-thermal decomposition of said wastes under a residual pressure of from 1.10.sup.-1 to 1.10.sup.-2 mm Hg while elevating temperature to from 25.degree. to 1,150.degree. C. at variable heating rates ranging from 0.5.degree. to 20.degree. C./min. The vacuum-thermal decomposition of the wastes is accompanied by sublimation of arsenic which is condensed. The resulting melt of gallium is cooled to a temperature of from 50.degree. to 100.degree. C. at variable cooling rates ranging from 0.05.degree. to 15.degree. C./min. Then the melt of gallium is filtered at the cooling temperature of the melt. The filtered gallium melt is subjected to a hydrochemical treatment. The melt of gallium having passed the hydrochemical treatment is subjected to a fractional multi-stage crystallization to crystallize gallium in an amount of from 60 to 95% by mass of its initial charge in each stage; the metal residues enriched with impurities are recycled from each subsequent stage to each preceding one.

REFERENCES:
patent: 2927853 (1960-03-01), Merkel
patent: 3166405 (1965-01-01), Kulifay
patent: 3512958 (1970-05-01), Yokozawa et al.
patent: 4097267 (1978-06-01), Baccaro et al.

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