Process for producing high-porosity non-evaporable getter materi

Details Process for producing high-porosity non-evaporable getter materi Process for producing high-porosity non-evaporable getter materi

1998-05-29

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Gettering of substrate

438800, H01L 21322

Patent

active

061108073

ABSTRACT:
A process is disclosed for producing non-evaporable getter materials having high porosity and improved gas sorption rates. The process includes mixing together a metallic getter element, a getter alloy and a solid organic compound, all three components being in the form of powders having specific particle sizes. The mixture is subjected to a compression of less than about 1000 kg/cm.sup.2 and is sintered at a temperature between about 900.degree. C. and about 1200.degree. C. for a period between about 5 minutes and about 60 minutes. The getter material thus obtained is used to produce getter bodies shaped as pellets, sheets or discs having better mechanical strength than similar bodies of other getter material having comparable porosity.

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