Process for producing grain oriented electrical silicon steel sh

Metal treatment – Process of modifying or maintaining internal physical... – Magnetic materials

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148113, H01F 104

Patent

active

042253667

ABSTRACT:
A grain oriented electrical silicon steel sheet containing aluminium and having an extremely high magnetic flux density, for example, a B8 of 1.90 or more, is produced by a secondary recrystallization annealing operation in which, during the period of elevating the temperature of a reducing atmosphere to a level within a range of from 850.degree. to 950.degree. C., the partial pressure of nitrogen in the reducing atmosphere is limited to 20% or less based on the entire pressure of the reducing atmosphere, and during the period of elevating the temperature of the reducing atmosphere in which the secondary recrystallization is in progress, the partial pressure of nitrogen is maintained at a level of at least 3%.

REFERENCES:
patent: 3764406 (1973-10-01), Littmann
patent: 3846187 (1974-11-01), Sakakura et al.
patent: 4030950 (1977-06-01), Shilling et al.
patent: 4118255 (1978-10-01), Barisoni et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing grain oriented electrical silicon steel sh does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing grain oriented electrical silicon steel sh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing grain oriented electrical silicon steel sh will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1167778

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.