Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-11-18
1998-12-22
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 36, 117902, C30B 1536
Patent
active
058512845
ABSTRACT:
According to the process of the present invention for producing a garnet single crystal fiber, a crystal is grown while the direction of a seed crystal, corresponding to the direction of growth, is set in a direction having angles of at least 10.degree. from a direction equivalent to the <100> orientation, at least 20.degree. from a direction equivalent to the <110> orientation and at least 20.degree. from a direction equivalent from the <211> orientation. The resulting garnet single crystal fiber does not include a core, which is formed due to facet formation, and has an excellent optical homogeneity necessary for use in an optical device such as a laser device or an isolator.
REFERENCES:
patent: 3607390 (1971-09-01), Comstock, et al.
patent: 4421721 (1983-12-01), Byer et al.
"Macroscopic strain in facetted regions of garnet crystals", B. Cockayne et al, Journel of Materials Sciences 8, (1973), pp. 382-384.
"Pulling Optical Fibers", R.S. Feigelson, Journal of Crystal Growth 79 (1986), pp. 669-680.
Single-crystal fiber optical devices: A Nd:YAG fiber laser, C.A. Burrus et al, Applied Physics Letters, vol. 26, No. 6, Mar. 15, 1975, pp. 318-320.
Ishibashi Shigeo
Ishida Yuzo
Naganuma Kazunori
Yokohama Itaru
Garrett Felisa
Nippon Telegraph and Telephone Corporation
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