Process for producing fine particles of bismuth titanate

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S584000, C977S775000, C977S776000, C977S900000

Reexamination Certificate

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11223984

ABSTRACT:
It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

REFERENCES:
patent: 4569775 (1986-02-01), Kubo et al.
patent: 4668500 (1987-05-01), Yamanoi et al.
patent: 60-33216 (1985-02-01), None
patent: 61-86423 (1986-05-01), None
patent: 61158824 (1986-07-01), None
patent: 62176915 (1987-08-01), None
patent: 63-100930 (1988-05-01), None
patent: 07-202295 (1995-08-01), None

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