Process for producing ferroelectric crystalline material

Details Process for producing ferroelectric crystalline material Process for producing ferroelectric crystalline material

1974-08-19

1977-05-31

Carter, Herbert T.

Stock material or miscellaneous articles

Composite

Of silicon containing

252 629, 423326, 423593, 427 47, 427 93, 427126, 427128, 427130, 428469, 428539, C01G 1700, B32B 900

Patent

active

040270742

ABSTRACT:
Lead germanate, Pb.sub.5 Ge.sub.3 O.sub.11, or lead germanate/silicate in which up to 2/3 on a molar basis of the germanium has been substituted with silicon, can be formed from a glassy state to a ferroelectric state by a simple annealing process. The lead germanate or lead germanate/silicate is heated to a temperature sufficient to anneal it into a crystalline phase, then cooled below the ferroelectric transition temperature for the composition while an electric field is applied.

REFERENCES:
patent: 3193503 (1965-07-01), Smith
patent: 3243335 (1966-03-01), Faile
patent: 3694360 (1972-09-01), Weaver
Iwasaki et al., "Journal Applied Physics," vol. 43, Dec. 1972, pp. 4907-4915.

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