Process for producing epitaxial semiconductor material layers on

Details Process for producing epitaxial semiconductor material layers on Process for producing epitaxial semiconductor material layers on

1980-03-13

1981-04-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 118415, H01L 21208

Patent

active

042617707

ABSTRACT:
A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the lower region of an epitaxy solution chamber is clad with a substrate material so as to displace the location of the bead growth away from the actual substrate and toward the region of the cladding. This process is useful for producing GaAs-(Ga, Al) As and (Ga, In) (As, P) mixed crystal layers for luminescent diodes and laser diodes.

REFERENCES:
patent: 3901744 (1975-08-01), Bolger et al.
patent: 4050964 (1977-09-01), Rode
patent: 4088514 (1978-05-01), Hara
patent: 4115162 (1978-09-01), Pawlik et al.
Rode, Western Electric Technical Digest, No. 46, p. 29 (Apr. 1977).
Rode et al., J. of Crystal Growth, vol. 29, pp. 61-64 (1975).

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