Process for producing electronic grade aluminum nitride films ut

Details Process for producing electronic grade aluminum nitride films ut Process for producing electronic grade aluminum nitride films ut

1978-05-15

1979-05-01

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148174, 156612, 156614, 156DIG61, 156646, 156656, 156667, 252 623GA, 423406, 423412, 357 4, H01L 21205, H01L 2186

Patent

active

041521820

ABSTRACT:
Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum oxide substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon.

REFERENCES:
patent: 2962359 (1960-11-01), Perieres et al.
patent: 3092455 (1963-06-01), Paris et al.
patent: 3128153 (1964-04-01), Addamiano
patent: 3291657 (1966-12-01), Sirtl
patent: 3307908 (1967-03-01), Mandorf
patent: 3461004 (1969-08-01), Lochner et al.
patent: 3577285 (1971-05-01), Rutz
patent: 3589936 (1971-06-01), Tramposch
patent: 4008111 (1977-02-01), Rutz
Cuomo et al., "Growing . . . Aluminum Nitride Crystals" I.B.M. Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2819-2820.
Rutz, R. F., "Ultraviolet . . . AlN" Applied Physics Letters, vol. 28, No. 7, 1 Apr. 1976, pp. 379-381.
Slack et al., "Growth of High Purity AlN Crystals" J. Crystal Growth, vol. 34, 1976, pp. 263-279.

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