Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-02-25
2000-10-03
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438712, 438718, 438719, H01L 21301
Patent
active
061272744
ABSTRACT:
There is disclosed a process for producing electronic devices from a semiconductor wafer. The process comprises forming separation regions with a spatial pattern on the semiconductor wafer to provide separation between electronic devices, and depositing a conductive contact layer on the wafer and patterning the contact layer in such a way that conductive terminals extend from the front side of the wafer over at least part of the cross section of the patterned separation regions. The terminals are bared by removing material of the wafer in the semiconductor regions starting from the backside of the wafer, and the terminals of adjacent electronic devices are separated.
REFERENCES:
patent: 3639811 (1972-02-01), Schroeder
patent: 4661375 (1987-04-01), Thomas
patent: 5110764 (1992-05-01), Ogino
patent: 5789307 (1998-08-01), Igel et al.
German Search Report, dated Mar. 13, 1997.
Igel Guenter
Mall Martin
Micronas Intermetall GmbH
Plevy Arthur L.
Utech Benjamin L.
Vinh Lan
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