Process for producing dielectric layers for semiconductor device

Details Process for producing dielectric layers for semiconductor device Process for producing dielectric layers for semiconductor device

1982-10-08

1985-01-22

Kittle, John E.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 4271263, B05D 512

Patent

active

044952198

ABSTRACT:
A process for producing a dielectric layer which on a semiconductor layer comprises the steps of forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of the semiconductor layer and heating the semiconductor layer having the oxide layer thereon in an oxidizing atmosphere. The semiconductor layer is thermally oxidized so as to form an insulating layer which comprises oxide of the semiconductor material at the interface between the semiconductor layer and the oxide layer.

REFERENCES:
J. Electrochem. Soc.: Solid-State Science and Technology, "Film-Substrate Interaction in Si/Ta and Si/Ta.sub.2 O.sub.5 Structures", by Revesz et al., pp. 1514-1519.
Journal of Applied Physics, "General Relationship for the Thermal Oxidation of Silicon", by Deal et al., vol. 36, No. 12, Dec. 1965, pp. 3770-3778.

Affiliated with

Also associated with

Rating

Process for producing dielectric layers for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing dielectric layers for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing dielectric layers for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-566780