Process for producing diamond covered member

Details Process for producing diamond covered member Process for producing diamond covered member

1995-10-24

1998-09-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Forming a platelet shape or a small diameter, elongate,...

117 89, 117104, 117929, 423446, C30B 2300

Patent

active

058074325

ABSTRACT:
A diamond covered member which has a diamond crystal layer is formed by vapor phase synthesis on a surface of a substrate. The process comprises depositing plate-shaped diamond crystals by CVD at a carbon source concentration ranging from 0.01 to 10% at an atomic ratio of oxygen to carbon (O/C) of 0.5.ltoreq.(O/C).ltoreq.1.2 in a starting gas. The crystals may also be deposited by a burning flame method using an oxygen-acetylene flame at a molar ratio of oxygen to acetylene in a main starting gas in the range of 0.9.ltoreq.(O.sub.2 /C.sub.2 H.sub.2).ltoreq.1.0. The plate-shaped diamond crystals are grown to coalesce into a film to form the diamond crystal layer.

REFERENCES:
patent: 4816286 (1989-03-01), Hirose
patent: 5174983 (1992-12-01), Snail
patent: 5198070 (1993-03-01), Jones
patent: 5275798 (1994-01-01), Aida
patent: 5334342 (1994-08-01), Harker et al.
patent: 5427053 (1995-06-01), Tsuno et al.
patent: 5443032 (1995-08-01), Vichr et al.

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