Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-07-24
1999-10-05
Jones, Deborah
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438691, 438692, 423263, 252302, 51309, B24D 334
Patent
active
059623438
ABSTRACT:
According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 .mu.m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce.sup.3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95.degree. C. and at an atmospheric pressure.
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patent: 5662874 (1997-09-01), David
Chemical Abstract vol. 108, No. 115183c "Method of Cerium Oxidation" (1988). (no month).
Sanderson, R.T. Inorganic Chemistry. Hirokawa Publishing Co., Apr. 1982, pp. 346-349.
Kaga Takao
Kasai Toshio
Nishimura Tohru
Ota Isao
Tanimoto Kenji
Jones Deborah
Nissan Chemical Industries Ltd.
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