Process for producing crystalline ceric oxide particles and abra

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438691, 438692, 423263, 252302, 51309, B24D 334

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active

059623438

ABSTRACT:
According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 .mu.m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce.sup.3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95.degree. C. and at an atmospheric pressure.

REFERENCES:
patent: 4606847 (1986-08-01), Woodhead
patent: 4647401 (1987-03-01), Gradeff et al.
patent: 5543126 (1996-08-01), Ota et al.
patent: 5662874 (1997-09-01), David
Chemical Abstract vol. 108, No. 115183c "Method of Cerium Oxidation" (1988). (no month).
Sanderson, R.T. Inorganic Chemistry. Hirokawa Publishing Co., Apr. 1982, pp. 346-349.

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