Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1993-07-12
1995-11-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 10, 117 43, 117 44, 117 89, C30B 108
Patent
active
054639751
ABSTRACT:
A process for producing a crystal comprises the step of applying crystal forming treatment on a light-transmissive substrate having a non-nucleation surface (S.sub.NDS) of a small nucleation density and a nucleation surface (S.sub.NDL) of a nucleation density (ND.sub.L) greater than the nucleation density (N.sub.DS) of said non-nucleation surface (S.sub.NDS) and formed of an amorphous material (M.sub.L) different from the material (M.sub.S) forming the non-nucleation surface (S.sub.NDS) at a small area sufficient to effect crystal growth from only a single nucleus to form a single crystal nucleus on the nucleation surface (S.sub.NDL), thereby growing a single crystal from the single nucleus, and the step of reducing the crystal defects of the crystal in the vicinity of the interface with the substrate by irradiation of light from the side of the substrate.
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Canon Kabushiki Kaisha
Kunemund Robert
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