Process for producing crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

117 10, 117 43, 117 44, 117 89, C30B 108

Patent

active

054639751

ABSTRACT:
A process for producing a crystal comprises the step of applying crystal forming treatment on a light-transmissive substrate having a non-nucleation surface (S.sub.NDS) of a small nucleation density and a nucleation surface (S.sub.NDL) of a nucleation density (ND.sub.L) greater than the nucleation density (N.sub.DS) of said non-nucleation surface (S.sub.NDS) and formed of an amorphous material (M.sub.L) different from the material (M.sub.S) forming the non-nucleation surface (S.sub.NDS) at a small area sufficient to effect crystal growth from only a single nucleus to form a single crystal nucleus on the nucleation surface (S.sub.NDL), thereby growing a single crystal from the single nucleus, and the step of reducing the crystal defects of the crystal in the vicinity of the interface with the substrate by irradiation of light from the side of the substrate.

REFERENCES:
patent: 3239372 (1966-03-01), Sirtl
patent: 3620833 (1971-11-01), Gleim et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4180618 (1979-12-01), Alpha et al.
patent: 4346513 (1982-08-01), Nishizawa et al.
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4522680 (1985-06-01), Ogawa
patent: 4585512 (1986-04-01), Hayafugi et al.
patent: 4592792 (1986-06-01), Corboy et al.
patent: 4637127 (1987-01-01), Kurogi et al.
Claassen et al, "The Nucleation of CVD Silicon on SiO.sub.2 and SiN.sub.4 Substrates" Journal of Electrochemical Society: Solid State Science and Technology, Jan. 1980 pp. 194-202.
Narayan et al, "Laser-Solid Interactions and Transient Thermal Processing of Materials", North-Holland, New York, 1983 pp. 581-592.
Jastrzebski, "SOI by CVD: Epitaxial Lateral Overgrowth (ELO) Process" Journal of Crystal Growth, vol. 63 (1983) pp. 493-526.
Jastrzebski et al., "Growth Process of Silicon Over SiO.sub.2 by CVD" Journal of Electrochemical Society: Solid State Technology, vol. 130 No. 7 pp. 1571-1580.
Elec. Lett., vol. 15, No. 25 (1979) 827:8.
Thin Sol. Films, vol. 113, No. 4 (1984) 337:35.
Sov. Phys. Tech. Phys., vol. 29, No. 7 (1984) 822:3.
Brit. J. App. Phys., vol. 18, No. 10 (1967) 1357:82.
Thin Sol. Films, vol. 124, No. 1 (1985) 3:10.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing crystal will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-191747

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.