Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1995-03-31
1996-06-25
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257522, H01L 21265, H01L 21308
Patent
active
055302807
ABSTRACT:
A process for making a crackstop on a semiconductor device is disclosed. The process involves creating and metallizing a groove surrounding the active region on a chip at the same time as other functional metallization is occurring, and then selectively etching out the metal in the groove after final passivation. In various embodiments the groove passes through the surface dielectric or the semiconductor substrate. In one embodiment the groove is replaced by hollow metal rings that can be stacked through multiple dielectric layers.
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International Business Machines - Corporation
Monin, Jr. Donald L.
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