Process for producing contact to GaAs active region

Details Process for producing contact to GaAs active region Process for producing contact to GaAs active region

1979-10-01

1981-11-17

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

29571, 357 67, 427 89, 4273833, H01L 21283

Patent

active

043011888

ABSTRACT:
The stability of semiconductor devices such as gallium arsenide field effect transistors are significantly improved by controlling the process leading to the production of the drain contact. The process requires that the annealing of metals used to form the contact to gallium arsenide is done under conditions which prevent the excessive formation of metal dendrites penetrating into the gallium arsenide active region.

REFERENCES:
patent: 3890699 (1975-06-01), Vilms
patent: 3914785 (1975-10-01), Ketchow
patent: 3959522 (1976-05-01), Ladany
patent: 3981073 (1976-09-01), Dully
patent: 4011583 (1977-03-01), Levinstein
patent: 4179533 (1979-12-01), Christou et al.
patent: 4179534 (1979-12-01), Chang et al.
patent: 4186410 (1980-01-01), Cho et al.
Anderson et al., "Smooth and Continuous Ohmic Contacts to GaAs Using Epitaxial Films", J. Appl. Phys. 40(5), May 1978, pp. 2998-3000.
Ho et al., "Stable Junctions Between GaAs . . . ", IBM TDB, 21, No. 4, p. 1753, Sep. 1978.
Ho et al., "Stable Junctions . . . As a Diffusion Barrier", IBM TDB, 21, No. 4, Sep. 1978, p. 1752.
Jung, "Binary Ag-IN Ohmic Contacts to GaAs and GaSb", Electron Technology, 8, 1, pp. 63-64, (1975).
Wemple et al., "Source-drain Burn-out in GaAs MESFETS", Inst. Phys. Conf. Ser. No. 33b.RTM. 1977, pp. 262-270.
Niehaus et al., "GaAs Power MESFETS", Inst. Phys. Conf. Ser. No. 33b.RTM. 1977, pp. 271-280.

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