Process for producing compound semiconductor single crystal

Details Process for producing compound semiconductor single crystal Process for producing compound semiconductor single crystal

2007-02-13

2007-02-13

Davis, Robert B. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S082000

Reexamination Certificate

active

09753662

ABSTRACT:
A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting a nucleation on a surface of a raw material melt by leaving a solid raw material in a part of the raw material melt, solidifying the raw material melt gradually from the surface of the raw material melt without a seed crystal, and growing a crystal by using a nucleus generated by the nucleation.

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