Process for producing compound semiconductor and semiconductor d

Details Process for producing compound semiconductor and semiconductor d Process for producing compound semiconductor and semiconductor d

1992-03-13

1994-04-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 93, 257617, 257653, H01L 3300

Patent

active

053048202

ABSTRACT:
A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:

REFERENCES:
patent: 3433684 (1969-03-01), Zanowick et al.
patent: 3620833 (1971-11-01), Gleim et al.
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3885061 (1975-05-01), Corboy et al.
patent: 3900863 (1975-08-01), Kim
patent: 3911431 (1975-10-01), Katsumura et al.
patent: 4007396 (1977-02-01), Wisbey et al.
patent: 4131496 (1978-12-01), Weitzel et al.
patent: 4174422 (1979-11-01), Matthews et al.
patent: 4239788 (1980-12-01), Beck
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4467521 (1984-08-01), Spooner et al.
patent: 4470192 (1984-09-01), Miller
patent: 4479847 (1984-10-01), McCaldin et al.
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4549926 (1985-10-01), Corboy et al.
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4587717 (1986-05-01), Daniele et al.
patent: 4591889 (1986-05-01), Gossard et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4670088 (1987-06-01), Tsaur et al.
patent: 4914495 (1990-04-01), Norton et al.
Blum, J. M. et al. "Integrated Multicolor Light-Emitting Diode Array" IBM Tech. Disc. Bull., Jul. 1972, pp. 445-446.
L. Ruge, Halbleiter Technologie, Berlin (1984) pp. 74-55.
Chen et al. "Embedded Epitaxial Growth of Lasers", Appl. Phys. Lett. 38(5), Mar. 1981.
"Single-crystal Films of Silicon on Insulators", Filby, J. D. et al., Brit. J. Appl. Phys. 18; 1357-82 (1967).
"Non-Planar VPE Growth of Low-Threshold (>60MA) Current 1.3 .mu.m CW Lasers", Olsen G. H. et al., IEDM Techn. Digest, pp. 798-800 (Dec. 1982).
"Structure of Cadmium Layers Vapor-Deposited on Muscovite," P. Dobbert et al., Kristall und Technik, vol. 8, No. 7, 1973, 853-857 (Original and Translation).

Affiliated with

Also associated with

Rating

Process for producing compound semiconductor and semiconductor d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing compound semiconductor and semiconductor d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing compound semiconductor and semiconductor d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-21734