Process for producing CMOS structures with Schottky bipolar tran

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29577C, 29578, 148175, 148187, H01L 2122

Patent

active

045369453

ABSTRACT:
A process is disclosed for making CMOS transistors in combination with self-aligned fully oxide isolated Schottky clamped bipolar transistors.

REFERENCES:
patent: 3556879 (1971-01-01), Mayer
patent: 4029522 (1977-06-01), DeLa Moneda
patent: 4032372 (1977-06-01), Vora
patent: 4161417 (1979-07-01), Yim et al.
patent: 4280272 (1981-07-01), Egawa et al.
patent: 4346512 (1982-08-01), Liang et al.
patent: 4354307 (1982-10-01), Vinson et al.
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4471523 (1984-09-01), Hu

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