Process for producing cadmium sulfide on a cadmium telluride sur

Details Process for producing cadmium sulfide on a cadmium telluride sur Process for producing cadmium sulfide on a cadmium telluride sur

1995-05-22

1996-07-30

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

427 76, 427535, 427569, 427575, 136258, 136260, 136264, 257614, 257631, H01L 3118

Patent

active

055411185

ABSTRACT:
A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

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Sandroff, et al., "Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation," Appl. Phys. Lett., vol. 51(1), pp. 33-35, 6 Jul. 1987.
Yablonovitch, et al., "Nearly ideal electronic properties of sulfide coated GaAs surfaces," Appl. Phys. Lett., vol. 51(6), pp. 439-441, 10 Aug. 1987.
Farrow, et al., "Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation," Appl. Phys. Lett., vol. 51(23), pp. 1931-1933, 7 Dec. 1987.
Nelson, et al., "Processing and characterization of large-grain thin-film CdTe," J. Vac. Sci. Technol., vol. A 12(5), pp. 2803-2807, Sep./Oct. 1994.

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