Process for producing bismuth-containing oxide films

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S255320, C427S255310, C427S255395, C427S255280, C427S249150, C427S255180, C427S255190

Reexamination Certificate

active

07618681

ABSTRACT:
A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.

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Office Action for U.S. Appl. No. 11/221,574 dated Oct. 16, 2008.

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