Process for producing bipolar semiconductor device utilizing pre

Details Process for producing bipolar semiconductor device utilizing pre Process for producing bipolar semiconductor device utilizing pre

1980-01-30

1981-09-22

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Electrical device making

29578, 29590, 148174, 148187, 148188, 148190, 357 59, 357 64, 357 67, 357 71, H01L 21283, H01L 21324

Patent

active

042901880

ABSTRACT:
A process for manufacturing a bipolar semiconductor device. An epitaxial layer is formed on a silicon wafer, and a base layer is formed by the diffusion of impurities having one conductivity type in a part of the epitaxial layer. Impurities having the opposite conductivity type are deposited in a part of the base layer, polycrystalline silicon is deposited on the entire surface of the wafer which is provided with windows for emitter, base and collector electrodes, and a gold-containing film is applied on the entire surface of the polycrystalline silicon layer. Impurities having the opposite conductivity type are deposited and driven into the base layer so as to form an emitter layer and simultaneously gold atoms are driven in through the collector windows into a collector layer of the epitaxial layer and through the base and emitter windows into the collector layer.

REFERENCES:
patent: 3473976 (1969-10-01), Castrucci et al.
patent: 3617398 (1971-11-01), Bilous et al.
patent: 3625781 (1971-12-01), Joshi et al.
patent: 3645808 (1972-02-01), Kamiyama et al.
patent: 3775196 (1973-11-01), Wakamiya et al.
patent: 3946425 (1976-03-01), Shoji et al.
patent: 4144106 (1979-03-01), Takeuchi
patent: 4146413 (1979-03-01), Yonezawa et al.

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