Process for producing bi-based oxide superconductor single cryst

Details Process for producing bi-based oxide superconductor single cryst Process for producing bi-based oxide superconductor single cryst

1993-04-15

1994-11-29

Kunemund, Robert

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

With melting

117 49, C30B 1320

Patent

active

053690907

ABSTRACT:
A process for producing Bi-based oxide superconductor single crystals by the floating zone method is disclosed, which comprises using a feed rod of an oxide comprising a formulation of metallic elements represented by the following general formula:

REFERENCES:
patent: 5015618 (1991-05-01), Levinson
patent: 5057492 (1991-10-01), Oka et al.
patent: 5162300 (1992-11-01), Bock et al.
Motehira et al. "Single Crystal Growth of Bismuth Calcium Strontium Cuprate (Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.y) by the Floating Zone Method", Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi, 97(10) 1009-14 (abs only) 1989.
Takekawa et al, "Single Crystal Growth of the Superconductor Bi.sub.2 (Bi.sub.0.2 Sr.sub.1.8 Ca.sub.1)(Cu.sub.2 O.sub.8 Journal of Crystal Growth", vol. 92 (1986) pp. 687-690.

Affiliated with

Also associated with

Rating

Process for producing bi-based oxide superconductor single cryst does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing bi-based oxide superconductor single cryst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing bi-based oxide superconductor single cryst will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-74132