Process for producing an MOS-transistor and a transistor produce

Details Process for producing an MOS-transistor and a transistor produce Process for producing an MOS-transistor and a transistor produce

1979-02-13

1981-10-20

Ozaki, G.

Metal treatment

Stock

Ferrous

148 15, 148187, 148188, 148190, 29571, 29589, H01L 2978

Patent

active

042964261

ABSTRACT:
A process for producing a field-effect insulated-gate transistor of the N-channel MOS-type, transistor comprising, on a semiconductor substrate, a control gate (14) and a source region (12), a drain region (13) and a channel region (15, 16), which comprises a characteristic step in which these three regions are formed by the simultaneous diffusion of impurities from sources (20) of polycrystalline silicon doped with two types of impurities, these sources then being preserved to form the contact electrodes between the regions created and the outer contacts (50).

REFERENCES:
patent: 3895978 (1975-07-01), Tarui et al.
IBM Tech. Discl. Bull., vol. 20, No. 1, Jun. 1977, pp. 146-148.

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