Process for producing an inversely operated transistor

Metal treatment – Compositions – Heat treating

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148187, H01L 2126

Patent

active

040452514

ABSTRACT:
A process for producing an inversely operated transistor in a body of semiconductor material which has arranged on its surface collector, base and emitter zones and wherein the base is doped by ion implantation so that minority charge carriers injected from the emitter zone into the base zone are accelerated in the direction towards the collector zone due to an inner drift field in the base zone.

REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3745070 (1973-07-01), Yada et al.
patent: 3756862 (1973-09-01), Ahn et al.
patent: 3856578 (1974-12-01), Payne et al.
patent: 3891468 (1975-06-01), Ito et al.
patent: 3897276 (1975-07-01), Kondo

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