Process for producing an integrated circuit device with substrat

Details Process for producing an integrated circuit device with substrat Process for producing an integrated circuit device with substrat

1990-08-30

1991-07-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437209, 437245, 437927, 437203, 437902, H01L 2144

Patent

active

050343475

ABSTRACT:
Disclosed is a process for producing a monolithic microwave integrated circuit device utilizing a body having a first thickness in the heat producing region and a second thickness in the region adjacent to the microstrip transmission lines.

REFERENCES:
patent: 3844858 (1974-10-01), Bean
patent: 4346513 (1982-08-01), Nishizawa et al.
patent: 4508815 (1985-04-01), Ackmann et al.
patent: 4794093 (1988-12-01), Tong et al.
patent: 4807022 (1989-02-01), Kazior et al.
Y. Hirachi et al., "A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 3, pp. 309-316, Mar., 1984.
M. Kobiki et al., "A Ka-Band GaAs Power MMIC", IEEE Internat'l Microwave Symposium Digest, MTT-S 1985, pp. 31-34.
K. C. Gupta et al., Microstrip Lines and Slotlines, Artech House, Inc., 1979, Chapter 1.

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