Process for producing an injection laser and laser obtained by t

Metal treatment – Compositions – Heat treating

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H01S 300

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043415709

ABSTRACT:
Process for producing an injection laser and laser obtained by this process. The active layer is weakly n doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homojunctions and two index jumps and the final structure is planar. In addition, there is an auto-alignment of the implanted and diffused zones.
Application to the construction of lasers used in optical telecommunication systems.

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patent: 3984262 (1976-10-01), Burnham et al.
patent: 4023993 (1977-05-01), Scifres et al.
patent: 4124826 (1978-11-01), Dixon et al.
patent: 4230997 (1980-10-01), Hartman et al.
Harris et al., IBM Technical Disclosure Bulletin; vol. 16, #1, Jun. 1973, pp. 171-172.
Bouley et al., IEEE Journal of Quantum Electronics, vol. QE-15, 1979, pp. 767-771.

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