Process for producing an improved dielectrically-isolated silico

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29578, 29580, 357 49, 357 50, 357 54, H01L 2120, H01L 2176

Patent

active

040564142

ABSTRACT:
Thermoprocessing of integrated-circuit devices and ionizing radiation environments create electronic charges in dielectric isolation materials and in dielectric-semiconductor interface regions. These charges can produce serious alterations in the operating characteristics of the devices and integrated circuits. The deleterious effect of these charges may be greatly reduced by the disclosed process which produces a single-crystal silicon film dielectrically isolated from a polycrystalline silicon support by an underlying insulator of either silicon nitride or silicon dioxide, both of which may be grown by the process at selected locations on the same chip.

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patent: 3832247 (1974-08-01), Saddler et al.
patent: 3913121 (1975-10-01), Youmans et al.
patent: 4004046 (1977-01-01), Price

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