Process for producing an epitaxial layer of galium nitride

Details Process for producing an epitaxial layer of galium nitride Process for producing an epitaxial layer of galium nitride

2009-05-18

2011-10-04

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S027000, C438S029000, C257SE21108, C257SE21097, C257SE21090, C257SE21460, C257SE21461

Reexamination Certificate

active

08030101

ABSTRACT:
A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially competent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.

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