Process for producing an electrically conductive diffusion barri

Details Process for producing an electrically conductive diffusion barri Process for producing an electrically conductive diffusion barri

1991-12-13

1994-04-05

Maples, John S.

Fishing, trapping, and vermin destroying

437192, 437247, H01L 21441, H01L 21324

Patent

active

053004558

ABSTRACT:
An integrated circuit such as a MOS transistor, having an electrically conductive diffusion barrier at the metal/silicon interface and a method of manufacture therefor is disclosed. The metal/silicon interface is formed by selective metal deposition onto silicon. According to the method, the interface is subjected to a nitrogen-based plasma during a period of at least five minutes. The interface is brought to a temperature greater than 500.degree. C. during this period, in order to create a diffusion barrier comprising a silicon nitride layer. The interface is then subjected to an annealing treatment under a neutral atmosphere so as to remove the nitrogen previously introduced into the metal. The diffusion barrier forms a linking and protecting interface between each source drain or gate zone of the MOS transistor and the corresponding layer of metal covering the latter.

REFERENCES:
patent: 4847111 (1989-07-01), Chow et al.
Extended Abstracts, vol. 86-2, Oct. 19, 1986, Princeton, N.J., p. 479, J. Amouroux, et al.: "Silicon and Titanium Nitriding by an H.F. NH3 Low Pressure Plasma".

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