Process for producing amorphous and crystalline silicon nitride

Details Process for producing amorphous and crystalline silicon nitride Process for producing amorphous and crystalline silicon nitride

1985-02-22

1985-11-12

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, 423406, C01B 21068

Patent

active

045527407

ABSTRACT:
A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

REFERENCES:
patent: 3211527 (1965-10-01), Forsyth
Behrens, et al., "Chem. Abstracts", 1962, p. 386f.

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