Process for producing a thin silicon solar cell

Fishing – trapping – and vermin destroying

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437 89, 437 4, 148DIG153, H01L 2120, H01L 21329

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054037514

ABSTRACT:
A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.

REFERENCES:
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 5103851 (1992-04-01), Nishida et al.
Japanese Journal of Applied Physics, Part 2, vol. 22, No. 12, L783--85 (Dec. 1983).

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